IXGH32N90B2D1 Datasheet - IXYS

IXGH32N90B2D1 IGBT

Advance Technical Information HiPerFASTTM IGBT with Fast Diode B2-Class High Speed IGBTs with Ultrafast Diode IXGH 32N90B2D1 IXGT 32N90B2D1 V I CES VC25 t CE(sat) fi typ = 900 V = 64 A = 2.7 V = 150 ns Symbol Test Conditions VCES VCGR VGES VGEM TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient IC25 IC110 ICM SSOA (RBSOA) TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load: VCL < 600V PC TC = 25°C TJ TJM Tstg Maximum lead.

IXGH32N90B2D1 Features

* High frequency IGBT

* High current handling capability

* MOS Gate turn-on - drive simplicity Applications

* PFC circuits

* Uninterruptible power supplies (UPS)

* Switched-mode and resonant-mode power supplies

* AC motor speed control

IXGH32N90B2D1 Datasheet (215.24 KB)

IXGH32N90B2D1 Datasheet Preview — Preview of IXGH32N90B2D1 PDF

Datasheet Details

Part number:

IXGH32N90B2D1

Manufacturer:

IXYS

File Size:

215.24 KB

Description:

Igbt.

📁 Related Datasheet

IXGH32N90B2 High Speed IGBTs (IXYS)

IXGH32N120A3 Ultra-Low Vsat PT IGBT (IXYS)

IXGH32N170 High Voltage IGBT (IXYS Corporation)

IXGH32N170A High Voltage IGBT (IXYS)

IXGH32N50B HiPerFAST IGBT (IXYS Corporation)

IXGH32N50BS HiPerFAST IGBT (IXYS Corporation)

IXGH32N50BU1 HiPerFAST IGBT (IXYS Corporation)

IXGH32N50BU1S HiPerFAST IGBT (IXYS Corporation)

TAGS

IXGH32N90B2D1 IGBT IXYS

IXGH32N90B2D1 Distributor