l
VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg
G E
C (TAB)
TO-247 AD
C (TAB) G C E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Maximu
✔ IXGH32N50BU1S Application
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.5
IXGH32N170A, IXYS
High Voltage IGBT
IXGH 32N170A IXGT 32N170A
VCES IC25 VCE(sat) tfi(typ)
= 1700 V = 32 A = 5.0 V = 50 ns
Symbol
Test Conditions
Maximum Ratings
.
