IXGH32N50BU1S Datasheet - IXYS Corporation

IXGH32N50BU1S HiPerFAST IGBT

Preliminary Data Sheet HiPerFASTTM IGBT with Diode Combi Pack IXGH32N50BU1 IXGH32N50BU1S VCES IC25 VCE(sat) tfi TO-247 SMD (32N50BU1S) = = = = 500 V 60 A 2.0 V 80 ns www.DataSheet4U.com Symbol Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25 °C TC = 90 °C TC = 25 °C, 1 ms VGE = 15 V, T VJ = 125°C, RG = 33 Ω Clamped inductive load, L = 100 µH TC = 25 °C Maximum Ratings 500 500 ±20 ±30 60 32 120 ICM = 64 @ 0.8 VCES 200 -55 +150 150 -55 +150.

IXGH32N50BU1S Features

* l VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg G E C (TAB) TO-247 AD C (TAB) G C E C = Collector, TAB = Collector G = Gate, E = Emitter, Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque, TO-247 AD l l l l Int

IXGH32N50BU1S Datasheet (71.77 KB)