IXGH32N50BS Datasheet - IXYS Corporation

IXGH32N50BS HiPerFAST IGBT

Preliminary Data Sheet HiPerFASTTM IGBT IXGH32N50B VCES IXGH32N50BS I C25 VCE(sat) tfi TO-247 SMD (32N50BS) = = = = 500 V 60 A 2.0 V 80 ns www.DataSheet4U.com Symbol VCES VCGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125° C, RG = 33 Ω Clamped inductive load, L = 100 µH TC = 25°C Maximum Ratings 500 500 ±20 ±30 60 32 120 ICM = 64 @ 0..

IXGH32N50BS Features

* l G E C (TAB) TO-247 AD C (TAB) G C E C = Collector, TAB = Collector G = Gate, E = Emitter, Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3) 1.13/10 Nm/lb.in. TO-247 AD TO-247 SMD 6 4 g g l l l International standard packages JEDEC

IXGH32N50BS Datasheet (71.39 KB)