IXGH64N60B3 Datasheet - IXYS

IXGH64N60B3 Medium speed low Vsat PT IGBT

Preliminary Technical Information GenX3TM 600V IGBT Medium speed low Vsat PT IGBTs for 5 - 40kHz switching IXGH64N60B3 IXGT64N60B3 Obsolete Part Number VCES = IC110 = VCE(sat) ≤ tfi(typ) = 600V 64A 1.8V 88ns Symbol Test Conditions VCES VCGR VGES VGEM IC110 ICM SSOA (RBSOA) TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 3Ω Clamped inductive load @ ≤ 600V PC TJ TJM Tstg TL TSOLD Md Weight TC = 25°C 1.6.

IXGH64N60B3 Features

* z Optimized for low conduction and switching losses z Square RBSOA z International standard packages Advantages z High power density z Low gate drive requirement Applications z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Battery Chargers z Welding Machines z Lamp Ballasts © 2008 IX

IXGH64N60B3-IXYS.pdf