IXGH60N60 Datasheet - IXYS Corporation

IXGH60N60 Ultra-Low VCE(sat) IGBT

Ultra-Low VCE(sat) IGBT www.datasheet4u.com IXGH 60N60 IXGK 60N60 IXGT 60N60 VCES = 600 V IC25 = 75 A VCE(sat) = 1.7 V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C, limited by leads TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 30 mH TC = 25°C Maximum Ratings 600 600 ±20 ±30 75 60 200 ICM = 100 @ 0.8 VCES 300 -55 +150 150 -55.

IXGH60N60 Features

* International standard package JEDEC TO-247 AD, TO-264, TO-268

* New generation HDMOSTM process

* Low VCE(sat) for minimum on-state conduction losses

* High current handling capability

* MOS Gate turn-on drive simplicity Applications

* AC motor speed

IXGH60N60 Datasheet (129.83 KB)

IXGH60N60 Datasheet Preview — Preview of IXGH60N60 PDF

Datasheet Details

Part number:

IXGH60N60

Manufacturer:

IXYS Corporation

File Size:

129.83 KB

Description:

Ultra-low vce(sat) igbt.

📁 Related Datasheet

IXGH60N60B2 IGBT (IXYS Corporation)

IXGH60N60C2 High Speed IGBT (IXYS Corporation)

IXGH60N60C3 High Speed PT IGBT (IXYS Corporation)

IXGH60N60C3D1 High Speed PT IGBT (IXYS)

IXGH60N30C3 High Speed IGBT (IXYS)

IXGH60N50 HIGH CURRENT MOS IGBT (IXYS Corporation)

IXGH64N60B3 Medium speed low Vsat PT IGBT (IXYS)

IXGH6N170 High Voltage IGBT (IXYS)

IXGH6N170A High Voltage IGBT (IXYS Corporation)

IXGH100N30C3 High Speed PT IGBT (IXYS)

TAGS

IXGH60N60 Ultra-Low VCEsat IGBT IXYS Corporation

Image Gallery

IXGH60N60 Distributor