* z G = Gate, E = Emitter, Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3) TO-247 AD TO-268 SMD 1.13/10 Nm/lb.in. 6 4 g g z z z Medium frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Appl
IXGH60N60B2 Datasheet (605.25 KB)
IXGH60N60B2
IXYS Corporation
605.25 KB
Igbt.
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Advance Technical Data
HiPerFASTTM IGBT
Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching
IXGH 60N60B.
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