IXGH60N60B2 Datasheet - IXYS Corporation

IXGH60N60B2, IGBT

www.DataSheet4U.com Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching IXGH 60N60B.

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IXGH60N60B2_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXGH60N60B2

Manufacturer:

IXYS Corporation

File Size:

605.25 KB

Description:

IGBT

Features

* z G = Gate, E = Emitter, Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Md Weight Mounting torque (M3) TO-247 AD TO-268 SMD 1.13/10 Nm/lb. in. 6 4 g g z z z Medium frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Appl

Applications

* z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 3.0 TJ = 25°C TJ = 150°C 5.0 50 1 ±100 TJ = 25°C 1.8 V µA mA nA V z z z z z VGE(th) ICES IGES VCE(sat) IC = 250 µA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 50 A, VGE = 15

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IXGH60N60B2 IGBT IXYS Corporation

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