IXGR72N60A3 Datasheet - IXYS

IXGR72N60A3 IGBT

GenX3TM 600V IGBT Ultra-low Vsat PT IGBTs for up to 5kHz switching IXGR72N60A3 VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 52A 1.35V 250ns Symbol VCES VCGR VGES VGEM IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg FC TL TSOLD VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 3Ω Clamped inductive load @ VCE ≤ 600V TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 52 400 ICM = 150 200 -55 +150 150 -55 +1.

IXGR72N60A3 Features

* z Mounting Force 1.6mm (0.063 in.) from case for 10s Plastic body for 10s 50/60 Hz, RMS IISOL ≤ 1mA 20..120/4.5..27 300 260 t = 1min 2500 t = 1s 3000 5 Silocon chip on Direct-Copper Bond (DCB) substrate Isolated mounting surface 2500V electrical isolation Advantages z z High power density Low g

IXGR72N60A3_IXYS.pdf