IXGR72N60C3 Datasheet - IXYS

IXGR72N60C3, High-Speed Low-Vsat PT IGBT

Preliminary Technical Information GenX3TM 600V IGBT (Electrically Isolated Tab) High-Speed Low-Vsat PT IGBT 40-100 kHz Switching IXGR72N60C3 *

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IXGR72N60C3-IXYS.pdf

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Datasheet Details

Part number:

IXGR72N60C3

Manufacturer:

IXYS

File Size:

892.25 KB

Description:

High-Speed Low-Vsat PT IGBT

Features

* mJ A
* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Optimized for Low Switching Losses W
* Square RBSOA
* Isolated Mounting Surface C
* Avalanche Rated C
* 2500V Electrical Isolation C °C Advantages °C V~
* High Power Density
* Low Gate Dr

Applications

* High Frequency Power Inverters Symbol Test Conditions Characteristic Values
* UPS (TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
* Motor Drives BVCES VGE(th) IC = 250A, VGE = 0V IC = 250A, VCE = VGE 600 V
* SMPS
* PFC Circuits 3.0 5.5 V
* Battery

IXGR72N60C3 Distributors

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IXGR72N60C3 High-Speed Low-Vsat IGBT IXYS

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