IXGR72N60C3 Datasheet - IXYS

IXGR72N60C3 High-Speed Low-Vsat PT IGBT

Preliminary Technical Information GenX3TM 600V IGBT (Electrically Isolated Tab) High-Speed Low-Vsat PT IGBT 40-100 kHz Switching IXGR72N60C3 Obsolete Part Number VCES IC110 VCE(sat) tfi(typ) = 600V = 35A £ 2.7V = 55ns ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD VISOL FC Weight TJ = 25C to 150C 600 TJ = 25C to 150C, RGE = 1M 600 Continuous 20 Transient 30 e TC = 25C TC = 11.

IXGR72N60C3 Features

* mJ A

* Silicon Chip on Direct-Copper Bond (DCB) Substrate

* Optimized for Low Switching Losses W

* Square RBSOA

* Isolated Mounting Surface C

* Avalanche Rated C

* 2500V Electrical Isolation C °C Advantages °C V~

* High Power Density

* Low Gate Dr

IXGR72N60C3-IXYS.pdf