* mJ A
* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Optimized for Low Switching Losses W
* Square RBSOA
* Isolated Mounting Surface C
* Avalanche Rated C
* 2500V Electrical Isolation C °C Advantages °C V~
* High Power Density
* Low Gate Dr
IXGR72N60C3 Datasheet (892.25 KB)
IXGR72N60C3
IXYS
892.25 KB
High-speed low-vsat pt igbt.
Preliminary Technical Information GenX3TM 600V IGBT (Electrically Isolated Tab) High-Speed Low-Vsat PT IGBT 40-100 kHz Switching IXGR72N60C3
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