IXGR72N60B3H1 Datasheet - IXYS

IXGR72N60B3H1 Medium Speed Low Vsat PT IGBT

GenX3TM 600V IGBT w/ Diode IXGR72N60B3H1 (Electrically Isolated Tab) Medium Speed Low Vsat PT IGBT for 5-40 kHz Switching VCES IC110 VCE(sat) tfi(typ) = 600V = 40A £ 1.80V = 92ns ISOPLUS247TM Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL FC TL TSOLD Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 25C TC = 110C TC = 110C TC = 25C, 1ms VGE = 15V, TVJ = 125C, RG = 3 Clamped Inductive Load TC = 25C 5.

IXGR72N60B3H1 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate

* Isolated Mounting Surface Optimized for Low Conduction and Switching Losses

* 2500V~ Electrical Isolation

* Square RBSOA

* Anti-Parallel Ultra Fast Diode Advantages

* High Power Density

* Low Gate Drive Requirement S

IXGR72N60B3H1_IXYS.pdf