IXGR72N60B3H1 Medium Speed Low Vsat PT IGBT

IXYS

Description

GenX3TM 600V IGBT w/ Diode IXGR72N60B3H1 (Electrically Isolated Tab) Medium Speed Low Vsat PT IGBT for 5-40 kHz Switching VCES IC110 VCE(sat) tfi(t.

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Datasheet Specifications

Part number: IXGR72N60B3H1
Manufacturer: IXYS
File Size: 255.90 KB
Datasheet: IXGR72N60B3H1_IXYS.pdf
Description: Medium Speed Low Vsat PT IGBT

Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface Optimized for Low Conduction and Switching Losses
* 2500V~ Electrical Isolation
* Square RBSOA
* Anti-Parallel Ultra Fast Diode Advantages
* High Power Density
* Low Gate Drive Requirement S

Applications

* Power Inverters
* UPS
* Motor Drives
* SMPS
* PFC Circuits
* Battery Chargers
* Welding Machines
* Lamp Ballasts © 2016 IXYS CORPORATION, All Rights Reserved DS99875C(01/16) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs IC = 50A, VCE = 10

IXGR72N60B3H1 Distributors

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IXGR72N60B3H1 Medium Speed Low Vsat IGBT IXYS

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