IXGR72N60B3H1 Datasheet, Igbt, IXYS

IXGR72N60B3H1 Features

• Igbt
• Silicon Chip on Direct-Copper Bond (DCB) Substrate
• Isolated Mounting Surface Optimized for Low Conduction and Switching Losses
• 2500V~ Electrical Isolation

PDF File Details

Part number:

IXGR72N60B3H1

Manufacturer:

IXYS

File Size:

255.90kb

Download:

📄 Datasheet

Description:

Medium speed low vsat pt igbt.

IXGR72N60B3H1 Application

• Applications
• Power Inverters
• UPS
• Motor Drives
• SMPS
• PFC Circuits
• Battery Chargers

TAGS

IXGR72N60B3H1

IXYS

📁 Related Datasheet

IXGR72N60A3 - IGBT (IXYS)
GenX3TM 600V IGBT Ultra-low Vsat PT IGBTs for up to 5kHz switching IXGR72N60A3 VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 52A 1.35V 250ns Symbol V.

IXGR72N60C3 - High-Speed Low-Vsat PT IGBT (IXYS)
Preliminary Technical Information GenX3TM 600V IGBT (Electrically Isolated Tab) High-Speed Low-Vsat PT IGBT 40-100 kHz Switching IXGR72N60C3* *Obsol.

IXGR72N60C3D1 - IGBT (IXYS)
GenX3TM 600V IGBT with Diode High-Speed Low-Vsat PT IGBT 40-100 kHz Switching IXGR72N60C3D1 VCES IC110 VCE(sat) tfi(typ) = = ≤£ = 600V 35A 2.7V 55.

IXGR120N60B - IGBT (IXYS)
HiPerFASTTM IGBT IXGR 120N60B ISOPLUS247TM (Electrically Isolated Back Surface) V= CES IC25 = = VCE(sat) 600 V 156 A 2.1 V Symbol Test Conditions .

IXGR120N60C2 - IGBT (IXYS)
ADVANCE TECHNICAL INFORMATION HiPerFASTTM IGBT IXGR 120N60C2 ISOPLUS247TM Lightspeed 2TM Series (Electrically Isolated Back Surface) V= I CES = VC.

IXGR16N170AH1 - High Voltage IGBT (IXYS)
High Voltage IGBT w/ Sonic Diode (Electrically Isolated Tab) IXGR16N170AH1 VCES IC90 VCE(sat) tfi(typ) = 1700V = 8A £ 5.0V = 35ns Symbol VCES VCG.

IXGR24N120C3D1 - High speed PT IGBT (IXYS)
Preliminary Technical Information GenX3TM 1200V IGBT IXGR24N120C3D1 High speed PT IGBTs for 20-50kHz Switching VCES = IC25 = VCE(sat) ≤ tfi(typ) = .

IXGR24N60C - IGBT (IXYS Corporation)
.. HiPerFASTTM IGBT ISOPLUS247TM IXGR 24N60C (Electrically Isolated Back Surface) VCES IC25 VCE(sat) tfi(typ) = 600 V = 42 A = 2.

IXGR32N170AH1 - High Voltage IGBT (IXYS)
Advance Technical Information .. High Voltage IGBT with Diode Electrically Isolated Tab IXGR 32N170AH1 VCES IC25 VCE(sat) tfi(typ).

IXGR32N170H1 - High Voltage IGBT (IXYS)
High Voltage IGBT with Diode Electrically Isolated Tab Preliminary Data Sheet IXGR 32N170H1 IVCC2E5S VCE(sat) tfi(typ) = 1700 V = 38 A = 3.5 V = 25.