* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface Optimized for Low Conduction and Switching Losses
* 2500V~ Electrical Isolation
* Square RBSOA
* Anti-Parallel Ultra Fast Diode Advantages
* High Power Density
* Low Gate Drive Requirement S
IXGR72N60B3H1 Datasheet (255.90 KB)
IXGR72N60B3H1
IXYS
255.90 KB
Medium speed low vsat pt igbt.
GenX3TM 600V IGBT w/ Diode IXGR72N60B3H1 (Electrically Isolated Tab) Medium Speed Low Vsat PT IGBT for 5-40 kHz Switching VCES IC110 VCE(sat) tfi(t.
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