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IXGR72N60B3H1 - Medium Speed Low Vsat PT IGBT

IXYS

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Datasheet Details

Part number	IXGR72N60B3H1
Manufacturer	IXYS
File Size	255.90 KB
Description	Medium Speed Low Vsat PT IGBT
Datasheet	IXGR72N60B3H1_IXYS.pdf

IXGR72N60B3H1 Product details

Features

Silicon Chip on Direct-Copper Bond (DCB) Substrate.
Isolated Mounting Surface Optimized for Low Conduction and Switching Losses.
2500V~ Electrical Isolation.
Square RBSOA.
Anti-Parallel Ultra Fast Diode Advantages.
High Power Density.
Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125C Characteristic Values Min. Typ. Max. 3.0 5.0 V 300 A 5 mA.

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Published: Sep 28, 2013 |