IXGR72N60C3D1 Datasheet - IXYS

IXGR72N60C3D1, IGBT

GenX3TM 600V IGBT with Diode High-Speed Low-Vsat PT IGBT 40-100 kHz Switching IXGR72N60C3D1 VCES IC110 VCE(sat) tfi(typ) = = ≤£ = 600V 35A 2.7V 55.

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Datasheet Details

Part number:

IXGR72N60C3D1

Manufacturer:

IXYS

File Size:

232.59 KB

Description:

IGBT

Features

* z z z z z z z 50/60 Hz, RMS, t = 1Minute IISOL < 1mA t = 20 Seconds Mounting Force Maximum Lead Temperature for Soldering 1.6mm (0.062 in. ) from Case for 10s 2500 3000 20..120/4.5..27 300 260 5 Silicon Chip on Direct-Copper Bond (DCB) Substrate Optimized for Low Switching Losses Square RBSOA Iso

Applications

* z z z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) ICES IGES VCE(sat) IC = 250μA, VCE = VGE TJ = 125°C VCE = VCES, VGE = 0V VCE = 0V, VGE = ±20V IC = 50A, VGE = 15V, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 3.0 5.5 300 5 ±100 2.10 1.65 2.70 V μA mA nA V V

IXGR72N60C3D1 Distributors

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IXGR72N60C3D1 IGBT IXYS

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