IXGR72N60C3D1 Datasheet - IXYS

IXGR72N60C3D1 IGBT

GenX3TM 600V IGBT with Diode High-Speed Low-Vsat PT IGBT 40-100 kHz Switching IXGR72N60C3D1 VCES IC110 VCE(sat) tfi(typ) = = ≤£ = 600V 35A 2.7V 55ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg VISOL FC TL TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Limited by Leads) TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load TC = 25°C .

IXGR72N60C3D1 Features

* z z z z z z z 50/60 Hz, RMS, t = 1Minute IISOL < 1mA t = 20 Seconds Mounting Force Maximum Lead Temperature for Soldering 1.6mm (0.062 in.) from Case for 10s 2500 3000 20..120/4.5..27 300 260 5 Silicon Chip on Direct-Copper Bond (DCB) Substrate Optimized for Low Switching Losses Square RBSOA Iso

IXGR72N60C3D1_IXYS.pdf