IXGX72N60B3H1, IXGK72N60B3H1 Datasheet - IXYS

IXGX72N60B3H1 600V IGBT

GenX3TM 600V IGBT w/ Diode Medium Speed Low Vsat PT IGBTs 5-40 kHz Switching IXGK72N60B3H1 IXGX72N60B3H1 VCES IC110 VCE(sat) tfi(typ) = 600V = 72A £ 1.8V = 92ns Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient Maximum Ratings 600 V 600 V 20 V 30 V TC = 25C ( Chip Capability) 178 Terminal Current Limit 160 TC = 110C 72 TC = 25C, 1ms 450.

IXGX72N60B3H1 Features

* Optimized for Low Conduction and Switching Losses

* Square RBSOA

* Anti-Parallel Ultra Fast Diode Advantages

* High Power Density

* Low Gate Drive Requirement Applications

* Power Inverters

* UPS

* Motor Drives

* SMPS

* PFC Circuits

* Battery Chargers