IXGX75N250 Datasheet - IXYS

IXGX75N250 High Voltage IGBT

Preliminary Technical Information High Voltage IGBTs For Capacitor Discharge Applications IXGK75N250 IXGX75N250 VCES = IC110 = VCE(sat) ≤ 2500V 75A 2.7V Symbol VCES VCGR VGES VGEM IC25 IC110 ILRMS ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 2500 V 2500 V ±20 V ±30 V TC = 25°C ( Chip Capability ) TC = 110°C TC = 25°C (Lead RMS Limit) TC = 25°C, VGE = 20V, 1ms VGE= 15V, .

IXGX75N250 Features

* Very High Peak Current Capability Low Saturation Voltage MOS Gate Turn-On Rugged NPT Structure Molding Epoxies meet UL 94V-0 Flammability Classification Advantages Easy to Mount Space Savings High Power Density Applications Capacitor Discharge Pulser Circuits © 2010 IXYS CORPORATION, All Rights Res

IXGX75N250 Datasheet (181.53 KB)