IXST40N60B High Speed IGBT
High Speed IGBT Short Circuit SOA Capability IXSH 40N60B VCES = IXST 40N60B IC25 = VCE(sat) = tfi typ = 600V 75A 2.2V 100 ns Preliminary data Symbol Test Conditions VCES VCGR VGES V GEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ T JM Tstg Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TJ = 125°C, RG = 2.7 W Clamped inductive load, VCC= 0.8 VCES VGE= 15 V, VCE = 360 V, TJ = 125°C R G = 22 W, non r.
IXST40N60B Features
* International standard packages
* Guaranteed Short Circuit SOA
capability
* Low VCE(sat)
- for low on-state conduction losses
* High current handling capability
* MOS Gate turn-on
- drive simplicity
* Fast Fall Time for switching speeds
up to 50 kHz