IXTA130N065T2
IXYS
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IXTA130N065T2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTA130N065T2
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 6.6mΩ@VGS=10V ·Fully characterized avalanche v.
IXTA130N10T - Power MOSFET
(IXYS Corporation)
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA130N10T IXTP130N10T
VDSS = ID25 =
RDS(on) ≤
100V 130A 9.1mΩ
TO-263 (IXTA)
.
IXTA130N10T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 9.1mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.
IXTA130N10T7 - Power MOSFET
(IXYS Corporation)
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA130N10T7
VDSS = ID25 =
RDS(on) ≤
100V 130A 9.1mΩ
Symbol
VDSS VDGR
VGSM
ID25.
IXTA130N15X4 - Power MOSFET
(IXYS)
X4-Class Power MOSFETTM
Advance Technical Information
IXTA130N15X4 IXTA130N15X4-7
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) .
IXTA130N15X4-7 - Power MOSFET
(IXYS)
X4-Class Power MOSFETTM
Advance Technical Information
IXTA130N15X4 IXTA130N15X4-7
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) .
IXTA100N04T2 - Power MOSFET
(IXYS)
Preliminary Technical Information
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA100N04T2 IXTP100N04T2
VDSS = 40V ID25 = 10.
IXTA100N04T2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTA100N04T2
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 7mΩ@VGS=10V ·Fully characterized avalanche volt.
IXTA100N15X4 - Power MOSFET
(IXYS)
X4-Class Power MOSFETTM
Advance Technical Information
IXTA100N15X4 IXTP100N15X4
VDSS = ID25 = RDS(on)
150V 100A 11.5m
N-Channel Enhancement Mode.
IXTA102N15T - Power MOSFET
(IXYS)
Trench Gate Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated
IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T
TO-263 (IXTA)
TO-247 (IXTH)
T.