Datasheet Specifications
- Part number
- IXTB62N50L
- Manufacturer
- IXYS
- File Size
- 143.68 KB
- Datasheet
- IXTB62N50L-IXYS.pdf
- Description
- Power MOSFET
Description
LinearTM Power MOSFET w/Extended FBSOA IXTB62N50L N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS = ID25 = ≤RDS(on) 500V 62A .
Features
* z Fast Intrinsic Diode z Avalanche Rated z Low RDS(ON) and QG z Low Package Inductance Advantages z High Power Density z Easy to Mount z Space Savings Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 30V, VDS =Applications
* z Programmable Loads z DC-DC Converters z Current Regulators z Battery Chargers z DC Choppers z Temperature and Lighting Controls © 2011 IXYS CORPORATION, All Rights Reserved DS99336B(11/11) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5IXTB62N50L Distributors
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