IXTH160N15T Datasheet - IXYS

IXTH160N15T Power MOSFET

Preliminary Technical Information TrenchHVTM Power MOSFET IXTH160N15T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 150 160 9.6 V A mΩ Symbol VDSS V DGR VGSM I D25 ILRMS IDM I A EAS dv/dt Pd TJ TJM Tstg T L TSOLD M d Weight Test Conditions TJ = 25°C to 175°C T J = 25°C to 175°C; R GS = 1MΩ Transient T = 25°C C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM T = 25°C C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C 1.6 mm (0.062 in.) fr.

IXTH160N15T Features

* z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z 175 °C Operating Temperature Advantages z Easy to mount z Space savings z High power density © 2007 IXYS CORPORATION, All rights reserved DS99840 (06/07) IXTH160N15T Symbol Test Conditions (T

IXTH160N15T Datasheet (164.95 KB)