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IXTH160N15T Power MOSFET

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Description

Preliminary Technical Information TrenchHVTM Power MOSFET IXTH160N15T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 150 160 .

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Datasheet Specifications

Part number
IXTH160N15T
Manufacturer
IXYS
File Size
164.95 KB
Datasheet
IXTH160N15T-IXYS.pdf
Description
Power MOSFET

Features

* z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z 175 °C Operating Temperature Advantages z Easy to mount z Space savings z High power density © 2007 IXYS CORPORATION, All rights reserved DS99840 (06/07) IXTH160N15T Symbol Test Conditions (T

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