IXTH420N04T2 Datasheet - IXYS

IXTH420N04T2 Power MOSFET

Advance Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTH420N04T2 VDSS = ID25 = RDS(on) ≤ 40V 420A 2.0mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold M d Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from Case for 10s Plastic Body fo.

IXTH420N04T2 Features

* z International Standard Package z 175°C Operating Temperature z High Current Handling Capability z Avalanche Rated z Fast Intrinsic Diode z Low RDS(on) Advantages z Easy to Mount z Space Savings z High Power Density Applications z DC/DC Converters and Off-line UPS z Primary- Side Switch z High Curr

IXTH420N04T2 Datasheet (164.96 KB)