IXTJ36N20 Datasheet - IXYS

IXTJ36N20 N-Channel MOSFET

ADVANCE TECHNICAL INFORMATION HiPerFETTM N-Channel Enhancement Mode IXTJ 36N20 VDSS = 200 V ID25 = 36 A RDS(on) = 70 mΩ trr < 200 ns Symbol Test Conditions VDSS VDGR VGS V GSM ID25 IDM IAR EAR dv/dt P D TJ TJM Tstg Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Mounting torque Maximum lead temperature for soldering 1.6 mm (0.06.

IXTJ36N20 Features

* International standard package JEDEC TO-247 AD

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* High commutating dv/dt rating

* Fast switching times Applications

* Switch-mode and resonant-mode power supplies

* Motor con

IXTJ36N20 Datasheet (67.84 KB)

IXTJ36N20 Datasheet Preview — Preview of IXTJ36N20 PDF

Datasheet Details

Part number:

IXTJ36N20

Manufacturer:

IXYS

File Size:

67.84 KB

Description:

N-channel mosfet.

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IXTJ36N20 N-Channel MOSFET IXYS

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