IXTP4N70X2
IXYS
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IXTP4N70X2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS ≥ 700V ·Static Drain-Source On-Resistance
: RDS(on) ≤ 850mΩ@VGS= 10V ·Fast Sw.
IXTP4N70X2M - Power MOSFET
(IXYS)
Preliminary Technical Information
X2-Class Power MOSFET
(Electrically Isolated Tab)
IXTP4N70X2M
VDSS =
ID25 = RDS(on)
700V 4A 850m
N-Channel E.
IXTP4N70X2M - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP4N70X2M
·FEATURES ·High power dissipation ·Static drain-source on-resistance:
RDS(on) ≤ 850mΩ@VGS=10V ·100% aval.
IXTP4N60P - PolarHV Power MOSFET
(IXYS)
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTU4N60P IXTY4N60P IXTA4N60P IXTP4N60P
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS d.
IXTP4N60P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP4N60P
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 2.0Ω@VGS=10V ·Fully characterized avalanche voltag.
IXTP4N65X2 - Power MOSFET
(IXYS)
Preliminary Technical Information
X2-Class Power MOSFET
N-Channel Enhancement Mode
IXTY4N65X2 IXTA4N65X2 IXTP4N65X2
VDSS = ID25 = RDS(on)
650V 4A.
IXTP4N65X2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP4N65X2
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 850mΩ@VGS=10V ·Fully characterized avalanche volt.
IXTP4N80P - Power MOSFET
(IXYS)
Advance Technical Information
PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA4N80P IXTP4N80P
VDSS = 800 = 3.6 ID25 RDS(on) ≤.
IXTP4N80P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP4N80P
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 3.4Ω@VGS=10V ·Fully characterized avalanche voltag.
IXTP42N15T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP42N15T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 45mΩ@VGS=10V ·Fully characterized avalanche volta.
