IXTP50N20PM Datasheet (IXYS)

IXTP50N20PM - Power MOSFET

PolarTM Power MOSFET (Electrically Isolated Tab) IXTP50N20PM VDSS = ID25 =  RDS(on) 200V 50A 60m N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C, Limited by TJM TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 1

IXTP50N20PM Features

* Plastic Overmolded Tab for Electrical Isolation

* International Standard Package

* Avalanche Rated

* Fast Intrinsic Diode

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switched-Mode and Resonant-Mode Powe