IXTY26P10T - Power MOSFET
TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTY26P10T IXTA26P10T IXTP26P10T Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-252 TO-263 TO-220 Maximum Ratings - 100 V - 100 V
IXTY26P10T Features
* International Standard Packages
* Avalanche Rated
* Extended FBSOA
* Fast Intrinsic Diode
* Low RDS(ON) and QG Advantages
* Easy to Mount
* Space Savings
* High Power Density Applications
* High-Side Switching
* Push Pull Amplifiers
* DC Choppers
* A
