IXTY26P10T Power MOSFET

IXYS

Description

TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTY26P10T IXTA26P10T IXTP26P10T Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ .

📥 Download Datasheet

IXTY26P10T Datasheet Preview — Preview of IXTY26P10T PDF

Datasheet Specifications

Part number: IXTY26P10T
Manufacturer: IXYS
File Size: 285.29 KB
Datasheet: IXTY26P10T-IXYS.pdf
Description: Power MOSFET

Features

* International Standard Packages
* Avalanche Rated
* Extended FBSOA
* Fast Intrinsic Diode
* Low RDS(ON) and QG Advantages
* Easy to Mount
* Space Savings

Applications

* High-Side Switching
* Push Pull Amplifiers
* DC Choppers
* Automatic Test Equipment
* Current Regulators
* Battery Charger Applications © 2017 IXYS CORPORATION, All Rights Reserved DS100291B(8/17) IXTY26P10T Symbol Test Conditions (TJ = 25C, Unless Otherwise Specifie

IXTY26P10T Distributors

📁 Related Datasheet

IXTY2N60P IXTY01N100 IXTY01N100D IXTY01N80 IXTY02N50D IXTY05N100

📌 All Tags

IXTY26P10T Power MOSFET IXYS

IXYS IXTY26P10T-like datasheet