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IXXR100N60B3H1 600V IGBT

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Description

XPTTM 600V IGBT GenX3TM w/ Diode IXXR100N60B3H1 (Electrically Isolated Tab) Extreme Light Punch Through IGBT for 10-30kHz Switching Symbol VCES VCG.

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Datasheet Specifications

Part number
IXXR100N60B3H1
Manufacturer
IXYS
File Size
232.68 KB
Datasheet
IXXR100N60B3H1-IXYS.pdf
Description
600V IGBT

Features

* z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z Optimized for 10-30kHz Switching z Square RBSOA z Avalanche Rated z Short Circuit Capability z Anti-Parallel Ultra Fast Diode z High Current Handling Capability Advantages z High Power De

Applications

* z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Battery Chargers z Welding Machines © 2013 IXYS CORPORATION, All Rights Reserved DS100420B(04/13) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f

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