IXXR100N60B3H1 Datasheet - IXYS

IXXR100N60B3H1 600V IGBT

XPTTM 600V IGBT GenX3TM w/ Diode IXXR100N60B3H1 (Electrically Isolated Tab) Extreme Light Punch Through IGBT for 10-30kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF90 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient Maximum Ratings 600 V 600 V ±20 V ±30 V TC = 25°C(Chip Capability) TC = 110°C TC = 90°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG.

IXXR100N60B3H1 Features

* z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z Optimized for 10-30kHz Switching z Square RBSOA z Avalanche Rated z Short Circuit Capability z Anti-Parallel Ultra Fast Diode z High Current Handling Capability Advantages z High Power De

IXXR100N60B3H1 Datasheet (232.68 KB)