IXXR110N65B4H1 Datasheet - IXYS

IXXR110N65B4H1 650V IGBT

XPTTM 650V GenX4TM IXXR110N65B4H1 w/ Sonic Diode (Electrically Isolated Tab) Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = 650V IC110 = 70A V CE(sat)  2.10V tfi(typ) = 43ns ISOPLUS247TM Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient Maximum Ratings 650 V 650 V ±20 V ±30 V TC = 25°C (Chip Capability) TC = 11.

IXXR110N65B4H1 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate

* Isolated Mounting Surface

* 2500V~ Electrical Isolation

* Optimized for 10-30kHz Switching

* Square RBSOA

* Short Circuit Capability

* Anti-Parallel Sonic Diode

* High Current Handling Capability Advantages

IXXR110N65B4H1 Datasheet (274.99 KB)