* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 2500V~ Electrical Isolation
* Optimized for 10-30kHz Switching
* Square RBSOA
* Short Circuit Capability
* Anti-Parallel Sonic Diode
* High Current Handling Capability Advantages
IXXR110N65B4H1 Datasheet (274.99 KB)
IXXR110N65B4H1
IXYS
274.99 KB
650v igbt.
XPTTM 650V GenX4TM IXXR110N65B4H1 w/ Sonic Diode
(Electrically Isolated Tab)
Extreme Light Punch Through IGBT for 10-30kHz Switching
VCES = 650V
IC1.
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Symbol
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Symbol
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IC25.
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Extreme Light Punch Through IGBT for 10-30 kHz Switching
VCES = IC110 =
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1.80.
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IXXH110N65B4 - 650V IGBT
(IXYS)
XPTTM 650V IGBT GenX4TM
IXXH110N65B4
Extreme Light Punch Through IGBT for 10-30kHz Switching
VCES = 650V
I
= 110A
C110
V 2.10V CE(sat)
tf.
IXXH110N65C4 - Extreme Light Punch Through IGBT
(IXYS)
XPTTM 650V IGBT GenX4TM
Extreme Light Punch Through IGBT for 20-60 kHz Switching
IXXH110N65C4
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V CE(sat)
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(IXYS)
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IXXH140N65B4
Extreme Light Punch Through IGBT for 10-30kHz Switching
VCES = 650V
IC110 = 140A
V.
