IXXR110N65B4H1 650V IGBT

IXYS

Description

XPTTM 650V GenX4TM IXXR110N65B4H1 w/ Sonic Diode (Electrically Isolated Tab) Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = 650V IC1.

📥 Download Datasheet

IXXR110N65B4H1 Datasheet Preview — Preview of IXXR110N65B4H1 PDF

Datasheet Specifications

Part number: IXXR110N65B4H1
Manufacturer: IXYS
File Size: 274.99 KB
Datasheet: IXXR110N65B4H1-IXYS.pdf
Description: 650V IGBT

Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 2500V~ Electrical Isolation
* Optimized for 10-30kHz Switching
* Square RBSOA
* Short Circuit Capability
* Anti-Parallel Sonic Diode
* High Current Handling Capability Advantages

Applications

* Power Inverters
* UPS
* Motor Drives
* SMPS
* PFC Circuits
* Battery Chargers
* Welding Machines
* Lamp Ballasts
* High Frequency Power Inverters ©2019 IXYS CORPORATION, All Rights Reserved DS100529D(4/19) Symbol Test Conditions (TJ = 25°C Unless Otherwise S

IXXR110N65B4H1 Distributors

📁 Related Datasheet

📌 All Tags

IXXR110N65B4H1 650V IGBT IXYS

IXYS IXXR110N65B4H1-like datasheet