IXYA30N120A4HV Datasheet (IXYS) - Ultra Low-Vsat PT IGBT

IXYA30N120A4HV, Ultra Low-Vsat PT IGBT

Advance Technical Information 1200V XPTTM GenX4TM IGBT Ultra Low-Vsat PT IGBT for up to 5kHz Switching IXYA30N120A4HV IXYP30N120A4 IXYH30N120A4 Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 1200 V 1200 V ±20 V ±30 V TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load TC = 25°C 106 A 30 A 184

IXYA30N120A4HV Features

* Optimized for Low Conduction

* Positive Thermal Coefficient of Vce(sat)

* International Standard Packages Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C