IXYH16N170CV1

High Voltage IGBT

IXYS

IXYH16N170CV1 Features

* High Voltage Package

* High Blocking Voltage

* Low Saturation Voltage Advantages

* Low Gate Drive Requirement

* High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, V

IXYH16N170CV1 Datasheet (228.10 KB)

IXYH16N170CV1 Datasheet Preview — Preview of IXYH16N170CV1 PDF

Datasheet Details

Part number:

IXYH16N170CV1

Manufacturer:

IXYS

File Size:

228.10 KB

Description:

High voltage igbt.
High Voltage XPTTM IGBT w/ Diode Advance Technical Information IXYH16N170CV1 VCES = 1700V IC110 = 16A V CE(sat)  3.8V tfi(typ) = 120ns Sy.

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