IXYH75N65C3D1 Datasheet - IXYS

IXYH75N65C3D1 IGBT

Preliminary Technical Information XPTTM 650V IGBT GenX3TM w/ Diode Extreme Light Punch through IGBT for 20-60kHz Switching IXYH75N65C3D1 VCES = 650V IC110 = 75A VCE(sat)  2.3V tfi(typ) = 60ns Symbol VCES VCGR VGES VGEM IICLR25MS IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TTeC rm=in2a5l°CCu(rCrehnipt Capability) Limit TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 2.

IXYH75N65C3D1 Features

* International Standard Package

* Optimized for 20-60kHz Switching

* Square RBSOA

* Avalanche Rated

* Short Circuit Capability

* High Current Handling Capability

* Anti-Parallel Fast Diode Advantages

* High Power Density

* Low Gate Drive Requirement Applications

IXYH75N65C3D1-IXYS.pdf