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SS150TA60110

Silicon Carbide Schottky Diode

SS150TA60110 Features

* Repetitive Peak Forward Surge Current TVJ = 45°C, tP = 10 ms Half Sine Wave D = 0.3 Operating Virtual Junction Temperature Storage Temperature TC = 25 °C (20 W/device)

* 600 V SiC Schottky

SS150TA60110 Datasheet (187.56 KB)

Preview of SS150TA60110 PDF

Datasheet Details

Part number:

SS150TA60110

Manufacturer:

IXYS

File Size:

187.56 KB

Description:

Silicon carbide schottky diode.
SS150TA60110, SS150TC60110, SS150TI60110 Silicon Carbide Schottky Diode Part Number SS150TA60110 SS150TC60110 SS150TI60110 VRRM (V) 600 600 600 IF(AV.

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SS150TA60110 Silicon Carbide Schottky Diode IXYS

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