* Repetitive Peak Forward Surge Current TVJ = 45°C, tP = 10 ms Half Sine Wave D = 0.3 Operating Virtual Junction Temperature Storage Temperature TC = 25 °C (20 W/device)
* 600 V SiC Schottky
SS150TI60110 Datasheet (187.56 KB)
SS150TI60110
IXYS
187.56 KB
Silicon carbide schottky diode.
SS150TA60110, SS150TC60110, SS150TI60110
Silicon Carbide Schottky Diode
Part Number SS150TA60110 SS150TC60110 SS150TI60110 VRRM (V) 600 600 600 IF(AV.
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