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IXFB82N60Q3 Power MOSFET

IXFB82N60Q3 Description

Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFB82N60Q3 D G S VDSS = ID25 =  RDS(on) trr  600V 82A 7.

IXFB82N60Q3 Features

* Low Intrinsic Gate Resistance
* Low Package Inductance
* Fast Intrinsic Rectifier
* Low R and Q DS(on) G Advantages
* High Power Density
* Easy to Mount
* Space Savings Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 3mA V

IXFB82N60Q3 Applications

* DC-DC Converters
* Battery Chargers
* Switch-Mode and Resonant-Mode Power Supplies
* DC Choppers
* Temperature and Lighting Controls © 2020 IXYS CORPORATION, All Rights Reserved DS100339A(1/20) Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic V

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Datasheet Details

Part number
IXFB82N60Q3
Manufacturer
IXYS Corporation
File Size
658.31 KB
Datasheet
IXFB82N60Q3_IXYSCorporation.pdf
Description
Power MOSFET

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