Datasheet Details
- Part number
- IXFN40N110P
- Manufacturer
- IXYS Corporation
- File Size
- 129.35 KB
- Datasheet
- IXFN40N110P_IXYSCorporation.pdf
- Description
- Power MOSFET
IXFN40N110P Description
PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD T.
IXFN40N110P Features
* International standard package
* Encapsulating epoxy meets
UL 94 V-0, flammability classification
* miniBLOC with Aluminium nitride
isolation
* Fast recovery diode
* Unclamped Inductive Switching (UIS)
t = 1min t = 1s
rated
* Low package inductan
IXFN40N110P Applications
* z
z
nA
z
50 μA 3 mA 260 mΩ
z z
High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters
© 2008 IXYS CORPORATION
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