Datasheet Details
- Part number
- IXFN40N90P
- Manufacturer
- IXYS Corporation
- File Size
- 131.95 KB
- Datasheet
- IXFN40N90P_IXYSCorporation.pdf
- Description
- Power MOSFET
IXFN40N90P Description
Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VG.
IXFN40N90P Features
* z z
1.6mm (0.062 in. ) from case for 10s 50/60 Hz, RMS IISOL ≤ 1mA Mounting torque Terminal connection torque t = 1min t = 1s
300 2500 3000 1.5/13 1.3/11.5 30
z z z
International standard package miniBLOC, with Aluminium nitride isolation Avalanche Rated Low package inductance Fast intrinsic diod
IXFN40N90P Applications
* Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 20A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 900 3.5 6.5 ± 200 V V nA
z
z z z z
Switched-m
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