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2SA1051 Datasheet - Inchange Semiconductor

2SA1051 - POWER TRANSISTOR

*High Current Capability *Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) *High Power Dissipation *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for power amplifer and general purpose applications.

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2SA1051_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SA1051

Manufacturer:

Inchange Semiconductor

File Size:

198.07 KB

Description:

Power transistor.

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