Datasheet4U Logo Datasheet4U.com

2SA1279 POWER TRANSISTOR

2SA1279 Description

isc Silicon PNP Power Transistor 2SA1279 .
Collector-Emitter Breakdown Voltage : V(BR)CEO= -60V(Min). Good Linearity of hFE. Minimum Lot-to-Lot variations for robust device perform.

2SA1279 Applications

* Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A Icm Emitter Current-pulse

📥 Download Datasheet

Preview of 2SA1279 PDF
datasheet Preview Page 2

📁 Related Datasheet

  • 2SA1270 - SILICON PNP TRANSISTOR (KEC)
  • 2SA1271 - SILICON PNP TRANSISTOR (KEC)
  • 2SA1272 - SIlicon PNP Transistor (KEC)
  • 2SA1273 - SIlicon PNP Transistor (KEC)
  • 2SA1275 - Silicon PNP Transistor (KEC)
  • 2SA1276 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SA1200 - SILICON PNP TRIPLE DIFFUSED TRANSISTOR (Toshiba Semiconductor)
  • 2SA1201 - Silicon PNP Transistor (Toshiba Semiconductor)

📌 All Tags

POWER TRANSISTOR Inchange Semiconductor
Inchange Semiconductor 2SA1279-like datasheet