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2SA1694 POWER TRANSISTOR

2SA1694 Description

isc Silicon PNP Power Transistor 2SA1694 .
High Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V(Min). Good Linearity of hFE. Complement to Type 2SC4467. Minimum Lot-to-Lot.

2SA1694 Applications

* Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -8 A IB Base Current-Co

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