2SC1971 Datasheet - Inchange Semiconductor

2SC1971, Silicon NPN Power Transistor

www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1971 .
High Power Gain: Gpe≥ 10dB,f= 175MHz, PO= 6W; VCC= 13. High Reliability APPLICATIONS. Designed for RF power amplifiers on VHF band mo.

datasheet Preview Page 1 from Datasheet4u.com

2SC1971_InchangeSemiconductor.pdf

2SC1971 Datasheet Preview — Preview of 2SC1971 PDF

Datasheet Details

Part number:

2SC1971

Manufacturer:

Inchange Semiconductor

File Size:

217.70 KB

Description:

Silicon NPN Power Transistor

Applications

* Designed for RF power amplifiers on VHF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-Base Voltage VALUE 35 UNIT V Collector-Emitter Voltage RBE= ∞ Emitter-Base Voltage Collector Current Collector Power Dissipation @TC=25℃ PC

2SC1971 Distributors

📁 Related Datasheet

2SC1972 2SC1973 2SC1974 2SC1975 2SC1904 2SC1905

📌 All Tags

2SC1971 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SC1971-like datasheet