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2SC1971 Datasheet - Inchange Semiconductor

2SC1971 Silicon NPN Power Transistor

*High Power Gain: Gpe≥ 10dB,f= 175MHz, PO= 6W; VCC= 13.5V *High Reliability APPLICATIONS *Designed for RF power amplifiers on VHF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-Base Voltage VALUE 35 UNIT V Collector-Emit.

2SC1971_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SC1971

Manufacturer:

Inchange Semiconductor

File Size:

217.70 KB

Description:

Silicon npn power transistor.

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