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2SC1971 - Silicon NPN Power Transistor

2SC1971 Description

www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1971 .
High Power Gain: Gpe≥ 10dB,f= 175MHz, PO= 6W; VCC= 13. High Reliability APPLICATIONS. Designed for RF power amplifiers on VHF band mo.

2SC1971 Applications

* Designed for RF power amplifiers on VHF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-Base Voltage VALUE 35 UNIT V Collector-Emitter Voltage RBE= ∞ Emitter-Base Voltage Collector Current Collector Power Dissipation @TC=25℃ PC

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Datasheet Details

Part number
2SC1971
Manufacturer
Inchange Semiconductor
File Size
217.70 KB
Datasheet
2SC1971_InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SC1971-like datasheet