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2SC3884 Power Transistor

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Description

isc Silicon NPN Power Transistor .
High Breakdown Voltage- : VCBO= 1400V (Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device performance and reliab.

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Datasheet Specifications

Part number
2SC3884
Manufacturer
Inchange Semiconductor
File Size
215.05 KB
Datasheet
2SC3884_InchangeSemiconductor.pdf
Description
Power Transistor

Applications

* Horizontal deflection output for high resolution display.
* High speed switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1400 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V

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