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2SC3883 Silicon NPN Power Transistor

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Description

isc Silicon NPN Power Transistor 2SC3883 .
High Breakdown Voltage- : VCEO= 800V (Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device performance and reliabl.

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Datasheet Specifications

Part number
2SC3883
Manufacturer
Inchange Semiconductor
File Size
247.72 KB
Datasheet
2SC3883-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

Applications

* Horizontal deflection output for high resolution display.
* High speed switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 5.0

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