2SC3885 Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
High Breakdown Voltage : VCBO= 1400V (Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device performance and reliabl.

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Datasheet Specifications

Part number: 2SC3885
Manufacturer: Inchange Semiconductor
File Size: 215.03 KB
Datasheet: 2SC3885_InchangeSemiconductor.pdf
Description: Power Transistor

Applications

* Horizontal deflection output for high resolution display.
* High speed switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1400 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V

2SC3885 Distributors

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2SC3885 Power Transistor Inchange Semiconductor

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