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2SC5354 Silicon NPN Power Transistor

2SC5354 Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device pe.

2SC5354 Applications

* High speed and high voltage switching applications.
* Switching regulator applications.
* High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitte

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Datasheet Details

Part number
2SC5354
Manufacturer
Inchange Semiconductor
File Size
217.39 KB
Datasheet
2SC5354_InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SC5354-like datasheet