2SD218 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V (Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1. M.

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Datasheet Specifications

Part number: 2SD218
Manufacturer: Inchange Semiconductor
File Size: 208.79 KB
Datasheet: 2SD218-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Low saturation voltage
* Excellent current gain linearity ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A IB Base Current

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2SD218 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SD218-like datasheet