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2SD218 Datasheet - Inchange Semiconductor

2SD218 Silicon NPN Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V (Min) *Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V (Max.)@ IC= 7A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Low saturation voltage *Excellent current gain.

2SD218-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SD218

Manufacturer:

Inchange Semiconductor

File Size:

208.79 KB

Description:

Silicon npn power transistor.

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2SD218 2SD218 Silicon NPN Power Transistor Inchange Semiconductor

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