Datasheet Details
| Part number | 2SD218 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.79 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
 2SD218 Datasheet
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| Part number | 2SD218 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.79 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
2SD218 Datasheet
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Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V (Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V (Max.)@ IC= 7A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low saturation voltage Excellent current gain linearity ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collect
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