2SD525 Datasheet - Inchange Semiconductor

2SD525, Silicon NPN Power Transistors

isc Silicon NPN Power Transistor DESCRIPTION *Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) *Low Collector-Emitter Saturation Vo

Applications

* Designed for power amplifier applications.
* Recommended for 30W high fidelity audio frequency amplifier output stage applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-

2SD525_InchangeSemiconductor.pdf