2SD525 Silicon NPN Power Transistors

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2. Co.

📥 Download Datasheet

2SD525 Datasheet Preview — Preview of 2SD525 PDF

Datasheet Specifications

Part number: 2SD525
Manufacturer: Inchange Semiconductor
File Size: 213.57 KB
Datasheet: 2SD525_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistors

Applications

* Designed for power amplifier applications.
* Recommended for 30W high fidelity audio frequency amplifier output stage applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-

2SD525 Distributors

📁 Related Datasheet

2SD523 2SD524 2SD526 2SD529 2SD504 2SD5041

📌 All Tags

2SD525 Silicon NPN Power Transistors Inchange Semiconductor

Inchange Semiconductor 2SD525-like datasheet