Part number:
2SD526
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
166.58 KB
Description:
Npn transistor.
.
2SD526
Toshiba ↗ Semiconductor
166.58 KB
Npn transistor.
.
📁 Related Datasheet
2SD523 - NPN Transistor
(Toshiba)
SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER)
HIGH POWER SWITCHING APPLICATIONS.
FEATURES • High DC Current Gain : h FE=2000 (Min.) (V CE =3V, .
2SD523 - Silicon NPN Darlington Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown VCE=80V(Min.) ·High DC Current Gain-
: hFE= 1000(Min.)@IC= 3A ·L.
2SD524 - NPN Transistor
(Toshiba)
SILICON NPN TRIPLE DIFFUSED TYPE
(DARLINGTON POWER)
_
HIGH POWER SWITCHING APPLICATIONS.
FEATURES • High DC Current Gain : h FE=2000 (Min. )
(V C.
2SD525 - NPN Transistor
(Toshiba)
SILICON NPN TRIPLE DIFFUSED TYPE
POWER AMPLIFIER APPLICATIONS.
FEATURES • High Breakdown Voltage : VCEO=100V • Low Collector Saturation Voltage : VCE.
2SD525 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD525
..
DESCRIPTION ·With TO-220C package ·Compleme.
2SD525 - Silicon NPN Power Transistors
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min) ·Low Collector-Emitter Saturation Voltage-
:.
2SD526 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD526
..
DESCRIPTION ·With TO-220C package ·Compleme.
2SD526 - Silicon NPN Power Transistors
(Inchange Semiconductor)
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD526
DESCRIPTION ¡¤With TO-220C package ¡¤Complement to type 2SB596 ¡.
