2SD553 Datasheet, Transistor, Toshiba Semiconductor

PDF File Details

Manufacture Logo for Toshiba Semiconductor
Toshiba Semiconductor manufacturer logo

Part number:

2SD553

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

216.77kb

Download:

📄 Datasheet

Description:

Npn transistor.

Datasheet Preview: 2SD553 📥 Download PDF (216.77kb)
Page 2 of 2SD553 Page 3 of 2SD553

TAGS

2SD553
NPN
Transistor
Toshiba Semiconductor

📁 Related Datasheet

2SD550 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD550 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearit.

2SD551 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) ·Complement to Typ.

2SD551 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD551 .. DESCRIPTION ·With TO-3 package ·Complement .

2SD552 - NPN Transistor (Toshiba)
2SD552 SILICON NPN TRIPLE DIFFUSED TYPE HGIH POWER AMPLIFIER APPLICATIONS. HIGH POWER SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS. REGULATO.

2SD552 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor 2SD552 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V (Min) ·High Power Dissipation ·Complement.

2SD552 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD552 .. DESCRIPTION ·With TO-3 package ·Complement .

2SD553 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor 2SD553 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector-Emitter Saturation Vol.

2SD553 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD553 .. DESCRIPTION ·With TO-220C package ·Compleme.

2SD554 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD554 DESCRIPTION ·Contunuous Collector Current-IC= 2A ·Power Dissipation-PD=30W @TC= 25℃ ·.

2SD555 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V (Min) ·High Power Dissipation ·Complement to Type.

Stock and price

Samtec Inc
FLEXIBLE BOARD STACKING HEADER W
DigiKey
DW-10-12-S-D-553
0 In Stock
Qty : 1 units
Unit Price : $9.14
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts