2SD550 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD550 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Good Linearity of hFE. Low Collector Saturation Voltage : VCE(sat)= 0.

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Datasheet Specifications

Part number: 2SD550
Manufacturer: INCHANGE
File Size: 197.22 KB
Datasheet: 2SD550-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak PC

2SD550 Distributors

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2SD550 NPN Transistor INCHANGE

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