2SD556 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD556 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V (Min). Wide Area of Safe Operation. High Power. High Current Capability. Mi.

📥 Download Datasheet

2SD556 Datasheet Preview — Preview of 2SD556 PDF

Datasheet Specifications

Part number: 2SD556
Manufacturer: INCHANGE
File Size: 176.59 KB
Datasheet: 2SD556-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for high power AF amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A IB Base Current-Continuo

2SD556 Distributors

📁 Related Datasheet

2SD552 2SD553 2SD557 2SD5011 2SD5041 2SD5070

📌 All Tags

2SD556 NPN Transistor INCHANGE

INCHANGE 2SD556-like datasheet