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2SD556

NPN Transistor

2SD556 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V (Min)
*Wide Area of Safe Operation
*High Power
*High Current Capability
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for high power AF amplifier applications..

2SD556 Datasheet (176.59 KB)

Preview of 2SD556 PDF

Datasheet Details

Part number:

2SD556

Manufacturer:

INCHANGE

File Size:

176.59 KB

Description:

Npn transistor.

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2SD556 NPN Transistor INCHANGE

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