2SD556 Datasheet - INCHANGE

2SD556 NPN Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V (Min) *Wide Area of Safe Operation *High Power *High Current Capability *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for high power AF amplifier applications..

2SD556 Datasheet (176.59 KB)

2SD556 Datasheet Preview — Preview of 2SD556 PDF

Datasheet Details

Part number:

2SD556

Manufacturer:

INCHANGE

File Size:

176.59 KB

Description:

Npn transistor.

📁 Related Datasheet

2SD550 NPN Transistor (INCHANGE)

2SD551 NPN Transistor (INCHANGE)

2SD551 SILICON POWER TRANSISTOR (SavantIC)

2SD552 NPN Transistor (Toshiba)

2SD552 NPN Transistor (INCHANGE)

2SD552 SILICON POWER TRANSISTOR (SavantIC)

2SD553 NPN Transistor (Toshiba Semiconductor)

2SD553 NPN Transistor (INCHANGE)

2SD553 SILICON POWER TRANSISTOR (SavantIC)

2SD554 NPN Transistor (INCHANGE)

TAGS

2SD556 NPN Transistor INCHANGE

Image Gallery

2SD556 Distributor