2SD557 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor 2SD557 .
High Current Capability. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min. High Collector Power Dissipation. Minimum Lot-t.

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Datasheet Specifications

Part number: 2SD557
Manufacturer: Inchange Semiconductor
File Size: 202.99 KB
Datasheet: 2SD557_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for high power audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Curren

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2SD557 Silicon NPN Power Transistor Inchange Semiconductor

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