2SD557 Datasheet - Inchange Semiconductor

2SD557 Silicon NPN Power Transistor

*High Current Capability *Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) *High Collector Power Dissipation *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for high power audio amplifier applications. ABSOLUT.

2SD557 Datasheet (202.99 KB)

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Datasheet Details

Part number:

2SD557

Manufacturer:

Inchange Semiconductor

File Size:

202.99 KB

Description:

Silicon npn power transistor.

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2SD557 Silicon NPN Power Transistor Inchange Semiconductor

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