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2SD555

NPN Transistor

2SD555 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V (Min)
*High Power Dissipation
*Complement to Type 2SB600
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for high speed, high current and high power applications. AB.

2SD555 Datasheet (203.62 KB)

Preview of 2SD555 PDF

Datasheet Details

Part number:

2SD555

Manufacturer:

INCHANGE

File Size:

203.62 KB

Description:

Npn transistor.

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2SD555 NPN Transistor INCHANGE

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