2SD555 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V (Min). High Power Dissipation. Complement to Type 2SB600. Minimum Lot-to-Lot va.

📥 Download Datasheet

2SD555 Datasheet Preview — Preview of 2SD555 PDF

Datasheet Specifications

Part number: 2SD555
Manufacturer: INCHANGE
File Size: 203.62 KB
Datasheet: 2SD555-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for high speed, high current and high power applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Po

2SD555 Distributors

📁 Related Datasheet

2SD552 2SD553 2SD557 2SD5011 2SD5041 2SD5070

📌 All Tags

2SD555 NPN Transistor INCHANGE

INCHANGE 2SD555-like datasheet