2SD551 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
High Current Capability. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min. Complement to Type 2SB681. Minimum Lot-to-Lot v.

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Datasheet Specifications

Part number: 2SD551
Manufacturer: INCHANGE
File Size: 203.58 KB
Datasheet: 2SD551-INCHANGE.pdf
Description: NPN Transistor

Applications

* For AF power amplifier applications.
* Recommended for use in output stage of 80 watts power amplifier . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Coll

2SD551 Distributors

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2SD551 NPN Transistor INCHANGE

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