2SD551 Datasheet - INCHANGE

2SD551, NPN Transistor

isc Silicon NPN Power Transistor DESCRIPTION *High Current Capability *Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) *Compl

Applications

* For AF power amplifier applications.

* Recommended for use in output stage of 80 watts power amplifier .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Coll

2SD551-INCHANGE.pdf