Datasheet Details
| Part number | 2SD551 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 203.58 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD551-INCHANGE.pdf
|
| Part number | 2SD551 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 203.58 KB |
| Description | NPN Transistor |
| Datasheet |
2SD551-INCHANGE.pdf
|
High Current Capability Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) Complement to Type 2SB681 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For AF power amplifier applications. Recommended for use in output stage of 80 watts power amplifier .ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Ba
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