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BDS12 - Silicon NPN Power Transistor

BDS12 Description

isc Silicon NPN Power Transistor BDS12 .
High Voltage: VCEV= 100V(Min). Low Saturation Voltage- : VCE(sat)= 1. High Reliablity. Minimum Lot-to-Lot variations.

BDS12 Applications

* Designed for power linear and switching application and General puepose power. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 100 VCEV Collector-Emitter Voltage 100 VCEO Collector-Emitter Voltage 100 VEBO Emitter-Base Voltage 5 IC Collector

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Datasheet Details

Part number
BDS12
Manufacturer
Inchange Semiconductor
File Size
210.78 KB
Datasheet
BDS12-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor BDS12-like datasheet

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