BDS12 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor BDS12 .
High Voltage: VCEV= 100V(Min). Low Saturation Voltage- : VCE(sat)= 1. High Reliablity. Minimum Lot-to-Lot variations.

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Datasheet Specifications

Part number: BDS12
Manufacturer: Inchange Semiconductor
File Size: 210.78 KB
Datasheet: BDS12-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for power linear and switching application and General puepose power. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 100 VCEV Collector-Emitter Voltage 100 VCEO Collector-Emitter Voltage 100 VEBO Emitter-Base Voltage 5 IC Collector

BDS12 Distributors

📁 Related Datasheet

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BDS12 Silicon NPN Power Transistor Inchange Semiconductor

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