BDS19 Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor BDS19 .
High Voltage: VCEV= -150V(Min). Low Saturation Voltage- : VCE(sat)= -1. High Reliablity. Minimum Lot-to-Lot variatio.

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Datasheet Specifications

Part number: BDS19
Manufacturer: Inchange Semiconductor
File Size: 213.04 KB
Datasheet: BDS19-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for power linear and switching application and General puepose power. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -150 VCEO Collector-Emitter Voltage -150 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -8 IB Base C

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BDS19 Silicon PNP Power Transistor Inchange Semiconductor

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